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| Carbon Cell |
Hole concentration at 300K in C doped GaAs as a function of the temperature of the Carbon filament.
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CARBON SUBLIMATION DOPING CELL:
A heated Pyrolitic Graphite filament generates a controlled flux of Carbon Use of this type of doping source gives a hole concentration of between 1018 and 1020/cm3 in GaAs OPERATING PRINCIPLE: Carbon doping flux is determined by the filament temperature. The low thermal mass of the filament permits rapid adjustment of the doping levels. The filament emission area gives an excellent lateral uniformity for 2" and 3" substrates ADVANTAGES: (PUBLISHED RESULTS FOR CARBON DOPED III -V LAYERS) (1). J. Nagles , et al. , J. Cryst. Growth 111 (1991) 264-268 SPECIFICATIONS:
(#): Because of the high temperature of the PG filament, the thermocouple cannot be used to control the temperature and serves only as a reference. |
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| * Other lengths available. Consult ADDON | Top of the page | ||||||||||||||||||||