• TriQuint Semiconductor, Inc. achieves world record power and peak power efficiency for gallium nitride on silicon grown by MBE using ammonia. The applications are for 10GHz radar and 5GHz mobile phone base stations.
  TriQuint Semiconductor, Inc.* has announced world record GaN/Si HEMT devices characteristics.
  The epi layer was grown by MBE using ammonia as the nitrogen source at PICOGIGA International in Courtaboeuf, France. Devices have demonstrated a power of 7 W/mm at 10GHz and a peak power efficiency of 52%. Previously published results showed only 1W/mm for similar device structures.
  “We grew the layers in a 6 inch production MBE system” explained Dr Hacène Lahreche from PICOGIGA International, “modified with an ammonia gas injector for the nitrogen beam production and a high pressure ammonia resistant 6” substrate heater with 1000 C capability”. Both products were custom-designed by Addon to convert a solid source MBE system into a production ammonia gas source MBE system.
  

*Electronics Letter August 5, 2004